Abstract: In this paper, an innovative integration module for dual MOSFET switching circuits based on eSiFO technology is presented, which consists of two P-type MOSFET (PMOS) chips and two N-type ...
Providing a low profile and multiple circuit topologies, i.e., independent, dual, in parallel, common collector, and common emitter, Powerex’s split dual SiC MOSFET Modules (QJD1210010 and QJD1210011) ...
Powerex has created with a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter, two new Powerex split dual SiC MOSFET Modules ...
Abstract: This work discusses the feasibility of the series/parallel switching circuits using power MOSFETs in order to minimize the output power reduction of the photovoltaic power system due to the ...
The MOSFET power switch is commonly the most vulnerable part of a new switched-mode high-power circuit. One threat for this device is exceeding the value of the maximum allowed pulse current. You ...
SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing ...
Magnachip Semiconductor Corporation has launched two seventh-generation MXT MOSFETs, constructed on its Super-Short Channel technology, for smartphone battery protection circuit modules. Super-Short ...
SEOUL, South Korea, March 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation ("Magnachip") (NYSE: MX) announced today that the company has released two seventh-generation MXT ...
Toshiba has introduced a mosfet load switch gate driver in a 1.2 x 0.8 x 0.35mm 6bump WCSP6G the chip-scale package, suiting it to wearables and smartphones, it said. The IC, called TCK421G, can ...
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