Sunnyvale, Calif. – The Electronic Device Group of Mitsubishi Electric & Electronics USA Inc. has introduced MOSFET-based RF transmitters for VHF, UHF and 800-MHz applications. The eight modules and ...
Cambridge GaN Devices (CGD) is to lead a €10.3m project to develop intelligent GaN power modules. Called GaNext, and part of the Penta programme, its partners include academic and commercial ...
AYALA-LED Integrated Micro-Electronics Inc. (IMI) said it will enter the contract manufacturing of power-module business as it inaugurated its Insulated Gate Bipolar Transistor module facility. The ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
Using twin organic transistors, the device cancels out environmental noise, marking a major step toward truly reliable, ...
Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
GeneSiC Semiconductor announces the immediate availability of 20 m -1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging GeneSiC Semiconductor announces the immediate ...
How the first transistor evolved to meet new and emerging application demands as underlying structures transform and multi-die systems gained further adoption. How transistors have enabled the ...
For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...
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