The K4E170412C-FC60 is a dynamic RAM featuring an extended data out mode operation and a self-refresh and fast parallel test mode capability. The product also offers an early write or output enable ...

The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process ...

Thinfilm Electronics has developed a working prototype of the world's first printed non volatile memory device addressed with complementary organic circuits – the organic equivalent of cmos circuitry.

The AEFuse embedded, nonvolatile memory cores include what is said to be the first multiple-times-programmable (MTP) fuse fabricated in standard 0.25 µm and 0.18 µm CMOS processes. Offered as a ...

(1) A small, battery-backed memory bank in a computer that holds configuration settings. See BIOS setup. THIS DEFINITION IS FOR PERSONAL USE ONLY. All other reproduction requires permission.

SAN CARLOS, CA--(Marketwired - Jun 26, 2014) - Alliance Memory today introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with ...

Combination of Thinfilm Printed Rewritable Memory and PARC Transistors Enables Low-Cost, Printed Integrated Systems for the "Internet of things" OSLO, October 21 - Thin Film Electronics ASA ("Thinfilm ...

Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...

One of the main culprits behind BIOS issues is the CMOS battery. The battery powers the CMOS memory, which stores BIOS settings. If the battery is drained, the CMOS will not remember the settings, and ...

Clearing the CMOS memory on your motherboard is often the quickest way to access a desktop when you don't know the BIOS password. The password, along with your other BIOS settings, goes back to the ...

Electronics obtained through the bottom-up approach of molecular-level control of material composition and structure may lead to devices and fabrication strategies not possible with top-down methods.