Abstract: In this paper, a vertical n-channel enhancement-type MOSFET with internal block layer (bVMOS) is investigated theoretically. In the proposed structure, the internal block layer comprises a ...
This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...
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