EDN

MOSFET Qrr: Ignore at your peril in the pursuit of power efficiency

Efficiency is often the most important factor when designing a power supply for many types of consumer and industrial applications including mobile phones, tablet and notebook computers, rechargeable ...
EDN

PWM MOSFET Module – A Quick Analysis

In this post I will try to gain some insight into the electronics of a cheap PWM Power MOSFET Module. The module under the spotlight is the pretty common FR120N MOSFET Control Module which is a simple ...
Electronic Specifier

Six new DTMOSVI 600 series N-channel power MOSFETs chips

Toshiba Electronics Europe GmbH launches six new products featuring the DTMOSVI 600V series of N-channel power MOSFET chips ...
Hackaday

Let’s Play Spot The Fake MOSFET

Recently, the voice push to talk circuit in [Ryan]’s BITX40 radio was keyed down for a very long time. Blue smoke was released, a MOSFET was burnt out, and [Ryan] needed a new IRF510 N-channel MOSFET.
PC Magazine

power MOSFET

A type of metal oxide semiconductor field-effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides ...
Electronic Design

MOSFET Susceptibility to Cross Conduction

For the PDF version of this article, click here. The synchronous buck converter has been the topology of choice in PCs and notebook computers for years. This topology provides ease of control and high ...
Hosted on MSN

MOSFET Explained: High-Speed Switching in Electronics

This video provides a clear explanation of MOSFETs and their role in modern electronic systems. As advanced field-effect transistors, MOSFETs are used for high-speed switching and efficient power ...
Nature

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other ...
Electronic Design

Determine MOSFET Junction Temperature And Switching Losses For Various Package Types

For example, if a MOSFET in an SO8 package (θ JD = 15°C/W) dissipates a P j of 1 W and must maintain a junction temperature below 125°C, then the measured drain temperature must not exceed 110°C ...
Hosted on MSN

Toyota’s new Chinese BEV integrates ROHM SiC MOSFET

ROHM's 4th generation silicon carbide (SiC) metal-oxide-semiconductor field-effect Transistor (MOSFET) bare chip has been adopted for mass production in Toyota's new battery electric vehicle (BEV), ...

Magnachip Launches 650V Super Junction TOLL Package Products with Integrated Kelvin Source

Magnachip Semiconductor Corporation (NYSE: MX, "Magnachip") today announced the release of two new 650V Super Junction MOSFET ...