Embarking as the industry's first 190V n-channel power MOSFET with a co-packaged, 190V power diode, the SiA850DJ measures 2 mm x 2 mm x 0.75 mm and also claims to be the industry's first such device ...
It's vital that MOSFET power-switch drivers be protected from a reverse-battery connection. A small rectifier diode can shield against reversed batteries. But that approach is generally unacceptable ...
Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode
Abstract: The conduction power loss in an MOSFET synchronous rectifier with a parallel-connected Schottky barrier diode (SBD) was investigated. It was found that the parasitic inductance between the ...
Malvern, Pa. — Vishay Intertechnology, Inc. has released a single-chip power MOSFET and Schottky diode device that is said to improve operational efficiency by up to 6% in DC/DC conversion ...
Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster ...
MALVERN, Pa., Nov. 16, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced seven new MOSFET and diode power modules designed specifically for on-board charger ...
Designers often want to measure the junction temperature of a DC switching power supply. Knowing a system’s junction temperature is an important and basic requirement from safety and failure mode and ...
The TVS diode series offers single-component protection for SiC MOSFET gate drivers, simplifying designs and improving overvoltage protection in EV systems. TPSMB Asymmetrical TVS Diodes from ...
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