Abstract: We demonstrate the successful 19 kA short circuit protection of four parallel 1,200 V-600 A SiC MOSFET modules within the product configuration. The operation condition to protect the power ...

Abstract: SiC MOSFET is widely used in various power electronic converters due to its excellent performance such as high breakdown voltage, high switching speed and low conduction loss. However, the ...

Infineon Technologies AG has extended its portfolio of isolated EiceDRIVER Enhanced gate drivers with the F3 Enhanced (1ED332x) family with short-circuit protection. These devices provide protection ...

For the PDF version of this article, including diagrams and/or equations, click here. In any off-line flyback converter design, it is possible that the output ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

SEOUL, South Korea, March 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation ("Magnachip") (NYSE: MX) announced today that the company has released two seventh-generation MXT ...

In these scenarios every microsecond counts, and standard protective devices, such as fuses, relays, and moulded case circuit breakers, are failing to keep up within the rapidly growing world of AC ...

This novel approach does not require any change to the fundamental design, layout, or control circuitry of the SiC MOSFET. Many methods exist to improve the SCWT’s focus on reducing the FET saturation ...

Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...