The LND150 is a high voltage N-channel depletion-mode DMOS FET. The gate of the device is ESD protected. It is ideal for high voltage applications in the areas of normally-on switches, precision ...

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and ...

Toshiba Electronics Europe GmbH launches six new products featuring the DTMOSVI 600V series of N-channel power MOSFET chips ...

会場：米国ワシントンD.C. Hilton Washington and Towers Intelが45nm世代の量産用プロセス技術の詳細をIEDM 2007で発表した(講演番号10.2)。これまでにIntelは45nmプロセスの概要を報道関係者向けに何度か発表してきたものの、競合他社を含めた半導体メーカーのエンジニア ...

次世代CMOSロジックは立体化と極薄チャンネル化で1nm時代へ 本コラムの前回でお伝えしたように、半導体のデバイス技術とプロセス技術に関する世界最大の国際学会「IEDM(International Electron Devices Meeting)(通常の呼称は「アイイーディーエム」、日本語の通称は ...

The CMXDM7002A dual N-channel, enhancement-mode DMOS FET is said to have improved specifications compared to industry-standard 2N7002 devices. Housed in a surface-mount, SOT-26 package, the device ...

Using this device configuration, we measured electron field-effect mobilities for a broad range of polymer semiconductors. Poly(fluorene)-based (F8-based) polymers typically give µ e,FET in the range ...

“Historically, p-channel jfets availability has declined,” according to Californian fet maker Linear Integrated Systems (LIS). “Complementary single n-channel and p-channel jfets have become limited ...

Power supplies with N+1 redundancy require the use of an ORing diode or FET to isolate the main supply from the output bus in case of failure. Although ORing diodes are easy to use, the power loss ...

Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...