Using this device configuration, we measured electron field-effect mobilities for a broad range of polymer semiconductors. Poly(fluorene)-based (F8-based) polymers typically give µ e,FET in the range ...
A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...
The use of n-type and p-type silicon is a foundation concept in the design of transistors. Pure silicon is not conductive. However, it can be made conductive by adding other elements to its ...
A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a trench-type 1 silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor ...
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