A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...
The use of n-type and p-type silicon is a foundation concept in the design of transistors. Pure silicon is not conductive. However, it can be made conductive by adding other elements to its ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a trench-type 1 silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor ...
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