Abstract: This paper presents the design and fabrication of a T-shaped phase shifter monolithic microwave integrated circuit (MMIC) based on Schottky diode technology in aligned carbon nanotube (A-CNT ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates.

LAFOX, Ill., Nov. 12, 2020 (GLOBE NEWSWIRE) -- Richardson Electronics, Ltd. (NASDAQ: RELL) announces the availability of new SiC Schottky diodes from UnitedSiC, now with the lowest VF-Qc for fast ...