This file type includes high resolution graphics and schematics. Front-end limiter circuits using Schottky and PIN diodes can provide needed protection in communications and other RF systems. However, ...

If the car battery terminals are reverse connected during a jump start, vehicle upkeep, or repair, components in the associated automotive electronics modules may be damaged if they cannot handle the ...

ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R trade-off, delivering high reliability protection for a wide range ...

Since wireless radio transmissions were first achieved in the 1880s, telecommunications have evolved to the point where instant global communication is a daily reality, currently contributing more ...

As they took him away, Clyde realized that leaving out that protection FET to save $0.35 had been a poor design decision. (Courtesy of Autoevolution) Electronics and automobiles have a long history ...

Editor’s note: Please see this Planet Analog blog, Protecting Against Reverse Polarity: “Which Method is Right for You?” for determining the best method for your particular design. This article ...

KYOTO, Japan, Oct. 23, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional VF/IR trade-off. This way, it delivers high ...

Earlier this week, ROHM Co., Ltd. announced the development of a Schottky barrier diode that achieves both low forward voltage and low reverse current, addressing a longstanding technical challenge ...

Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...