In power electronics applications, the compound semiconductor silicon carbide (SiC) has been demonstrated in published literature [1] to be a superior material to silicon (Si) in many properties for ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

This video explains how MOSFETs work and why they are critical in modern electronics. MOSFETs are high-speed, efficient transistors used to switch and control electrical power in phones, computers, ...

Claiming to cut both on-resistance and switching loss, while optimising body-diode properties, ST’s 40V MOSFETs, STL320N4LF8 and STL325N4LF8AG, aim to save energy and ensure low noise in circuits for ...

Power electronics is a constantly evolving sector. High operating temperatures, high voltages, and high switching frequencies require new capabilities that only materials such as gallium nitride (GaN) ...

Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

The critical role of snubber circuits in minimizing ringing and overshoot. How snubber circuitry is evolving to adapt to trends in power electronics, like the rising interest in wide-bandgap ...

The DMP1022UFDF and DMP2021UFDF P-Channel MOSFETs from Diodes Incorporated are designed for load switching in high-efficiency battery management of portable consumer electronics such as tablets, ...

The gate current is programmable, helping engineers minimize MOSFET switching noise to meet electromagnetic compatibility ...

BEVERLY, Mass., June 22, 2017 (GLOBE NEWSWIRE) -- IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ:IXYS), announced the immediate availability of ...