Electromagnetic waves with frequencies between microwave and infrared light, also known as terahertz radiation, are leveraged ...

Toshiba Electronics Europe has announced the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3rd generation technology. These devices are specifically ...

Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates.

ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R trade-off, delivering high reliability protection for a wide range ...

Vishay Intertechnology has announced the third generation of its 650 and 1,200V SiC (silicon carbide) Schottky diodes, in a 2.6 x 5.2mm surface-mount package. The DO-221AC package, branded ‘SlimSMA HV ...